Complementary metal-oxide semiconductor (CMOS)

Complementary metal–oxide–semiconductor (CMOS) (pronounced "sea-moss", IPA: /siːmɔːs, ˈsiːmɒs/), is a major class of integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for a wide variety of analog circuits such as image sensors, data converters, and highly integrated transceivers for many types of communication.

Two important characteristics of CMOS devices are: high noise immunity and low static power consumption. Significant power is only drawn when the transistors in the CMOS device are switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor-transistor logic (TTL) or NMOS logic, which uses all n-channel devices without p-channel devices. CMOS also allows a high density of logic functions on a chip.[Source: Wikipedia]

CMOS- Complementary metal-oxide semiconductor is addressed in the ICT work programme 2011/12 (p. 39,40,41) under the following challenges/objectives:

> Challenge 3: Alternative Paths to Components and Systems

Objective ICT-2011.3.1 Very advanced nanoelectronic components: design, engineering, technology and manufacturability
a) Beyond CMOS technology
b) Circuit-technology solutions
c) Nano-manufacturing and Joint Equipment Assessment
d) Coordination and Support Actions

Objective ICT-2011.3.5 Core and disruptive photonic technologies
a) Core photonic technologies such as Optical data communications,    Biophotonics for early, fast and reliable medical diagnosis of diseases, Imaging and sensing for safety and security (CMOS), Lighting and displays, and 5. Photonics integration platforms

Objective ICT-2011.3.6 Flexible, Organic and Large Area Electronics and Photonics